Charge Carrier Density Modulation in Barium Stannate via Ion Gel Gating

Authors

Kelsey S. Harmatta, Macalester CollegeFollow

Abstract

What is the future of transistors? Ion gel gating has showed promise in opening up a new world of controlling semiconductor resistivity by inducing charge carries on the surface of semiconductors. Ion gel gating has the ability to induce a charge carrier density exceeding 10¹⁴ cm^-2 in materials. This research used ion gel gating on Barium Stannate (BSO) thin films. Adjusting the gate voltage changed the channel resistance by two orders of magnitude. Gate voltages of between -1.5 and 2.5 V showed an average reversibility ratio of 1.07 ± .15. This means that the resistivity can be controlled and reversed with ion gel gating.

Streaming Media

Recommended Citation

Harmatta, Kelsey S. (2017) "Charge Carrier Density Modulation in Barium Stannate via Ion Gel Gating," Macalester Journal of Physics and Astronomy: Vol. 5: Iss. 1, Article 11.
Available at: https://digitalcommons.macalester.edu/mjpa/vol5/iss1/11