In this project we investigate how the carrier concentration and scattering time of chemical vapor deposition (CVD) graphene samples are affected by the exposure of these samples to hydrazine monohydrate. We used both immersion techniques and vapor deposition techniques to surface dope our graphene samples. We use both Fourier transform infrared spectroscopy and Hall effect measurements to investigate these effects.We find that after surface doping CVD graphene samples, the electron concentration greatly increases while the scattering time is nearly unaffected. We also find that this doping process with hydrazine monohydrate is reversible.

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