Abstract
This study focuses on thin film deposition of ZnO onto a glass slide using magnetron sputtering. The focus of the study is to understand the effects of post-deposition annealing temperatures. The goal is to optimize crystal quality, conductivity, and transparency. The results attempt to answer the effects of room temperature deposition and changes in film properties once annealed. Annealing temperatures ranged from 100°C to 400°C with an annealing time of 30 minutes. This found an ideal temperature of 250°C for post-deposition annealing, resulting in approximately 3.86 times more conductivity with little to no decrease in transparency. However crystal quality did not conclusively improve at any temperature range. While providing increased parameters for conductivity and transparency, industry standards find post-deposition annealed films to be 5 times more resistive.
Recommended Citation
Rayen, Ishan
(2024)
"Effects of Post-Deposition Annealing on Room Temperature Deposited Zinc Oxide,"
Macalester Journal of Physics and Astronomy: Vol. 12:
Iss.
1, Article 10.
Available at:
https://digitalcommons.macalester.edu/mjpa/vol12/iss1/10