The goal of this work is study the mechanism of ZnO thin film deposition by rf magnetron sputtering with an argon plasma. This research will help understand the growth kinetics of the ZnO layer in relation to the growth conditions for solar cell application. We study the rate of growth, the electrical properties, the optical transmission and the zinc to oxygen ratio of each sample as a function of growth temperature. We conclude that Zn evaporation competes with incorporation into the film by combining with an arriving O atom.

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