What is the future of transistors? Ion gel gating has showed promise in opening up a new world of controlling semiconductor resistivity by inducing charge carries on the surface of semiconductors. Ion gel gating has the ability to induce a charge carrier density exceeding 1014 cm-2 in materials. This research used ion gel gating on Barium Stannate (BSO) thin films. Adjusting the gate voltage changed the channel resistance by two orders of magnitude. Gate voltages of between -1.5 and 2.5 V showed an average reversibility ratio of 1.07 ± .15. This means that the resistivity can be controlled and reversed with ion gel gating.

Streaming Media