A method was developed to investigate the solid-phase crystallization (SPC) reaction undergone by germanium thin films. Amorphous films were grown by the radio-frequency (RF) magnetron sputtering and then annealed for a maximum of 6 hours at two temperatures: 446°C and 460°C. Crystallinity was measured by resistivity measurements, as well as crystal peak height and area taken from X-ray diffractometer (XRD) data. Initial data shows qualitative agreement with a nucleation-growth model for the observed kinetic process. However, observed peak narrowing phenomena suggests a comprehensive model of XRD measurements of polycrystalline thin films is needed for a rigorous interpretation of the results.
Graham, John D.
"Kinetics of Solid Phase Crystallization of a-Ge Thin Films,"
Macalester Journal of Physics and Astronomy: Vol. 2
, Article 4.
Available at: http://digitalcommons.macalester.edu/mjpa/vol2/iss1/4