Titanium Nitride (TiN) can be sputtered into a thin film, and is a promising component for battery and supercapacitor electrodes. This research explored the relationship between Nitride partial pressure and film characteristics. We sputtered TiN into thin films in a low vacuum environment at tempuratures of approximately 70o C. Most films were deposited over the course of one hour including a five minute presputtering period where the substrate was covered. We found that film thickness, system voltage, and film restivitiy to be a function of N2 partial pressure.

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