Intermediate band materials have promising applications as affordable, highly efficient solar materials. However, intermediate band solar cells exhibit low efficiency to date. Carrier recombination is a critical process that limits efficiency. If electrons relax to the valence band before they can be collected, their energy is lost. To help understand the recombination dynamics and physical properties of intermediate band semiconductors, we obtain time-resolved THz conductivity measurements of the intermediate band semiconductor, GaPAsN, at various temperatures. From our results, we build a model that provides insight to the recombination dynamics of GaPAsN.

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