The aim of this project was to determine whether or not it was possible to develop a reliable method for transferring carbon vapor deposition graphene samples from nickel and copper to other substrates in order to take optical measurements on the graphene. Samples were characterized by Raman Spectroscopy, Fourier Transform Infrared Spectroscopy, and Hall effect measurements in order to determine: if the methods of transfer were successful; and to ascertain the carrier density and carrier mobility of the samples. The most successful method of transfer of samples involved pieces of graphene grown on nickel by carbon vapor deposition and used a silicon dioxide etchant and a nickel etchant before applying the graphene to other substrates. Good quality pieces of graphene with carrier densities typical of carbon deposition vapor graphene films grown on nickel were successfully transferred to other substrates. However a reliable method for the transfer of graphene films grown on copper was not completed.
"Graphene Transfer and Characterization,"
Macalester Journal of Physics and Astronomy:
1, Article 8.
Available at: http://digitalcommons.macalester.edu/mjpa/vol1/iss1/8