Ultra-thin films containing zinc oxide and polystyrene were prepared by sol-gel mixing and spincoating onto silicon substrate. Photoluminescent measurements were recorded following irradiation at 325 nm. We observed passivation of shallow defect states around 3.1 eV bandgap via confinement. Time-resolved photoluminescence plots suggest a significant time dependence of emission intensity related to photodegradation of the polymer matrix.

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